PPSC Lecturer of Physics Online Test 33 Past Papers

Leave a Comment / By Hassan / October 17, 2020

Online Free Taleem is free online MCQ’s test related to Lecturer Physics. All the individuals who are going to appear in Lecturer Physics written test can attempt these tests in order to prepare for it in best possible way. Our tests of Lecturer of Physics include all the important questions and Past Paper of Lecturer Physics, that have extremely high amount of chances for been included in the actual exam which make our test undoubtedly the best source of preparation.

Note:-

There will be 25 multiple choice question in the test.
Answer of the questions will change randomly each time you start this test.
Practice this test at least 5 times if you want to secure High Marks.
At the End of the Test you can see your Test score and Rating.
If you found any incorrect answer in Quiz. Simply click on the quiz title and comment below on that MCQ. So that I can update the incorrect answer on time.

Please Click Below START Button to Take this Lecturer Physics Test Online.

Test Instructions:-
Test Name	Lecturer Physics
Subject	Physics Test 33
Test Type	MCQs
Total Questions	25
Total Time	20 Minutes
Total Marks	100

You have 20 minutes to pass to the quiz.

PPSC Lecturer of Physics Test 33

1 / 25

Donor atoms introduced into a pure semiconductor at room temperature:

increase the number of holes in the valence band

increase the electrical resistivity

increase the number of electrons in the conduction band

lower the Fermi level

none of the above

2 / 25

An acceptor replacement atom in silicon might have.................... electrons in its outer shell:

3 / 25

When a forward bias is applied to a p-n junction the concentration of electrons on the p side:

decreases slightly

increases dramatically

does not change

increases slightly

decreases dramatically

4 / 25

A certain material has a resistivity of 7.8×10−8 Ω ·m at room temperature and it increases as the temperature is raised by 100◦ C. The material is most likely:

a heavily doped semiconductor

an insulator

a pure semiconductor

none of the above

a metal

5 / 25

The gap between the valence and conduction bands of a certain semiconductor is 0.85 eV. When this semiconductor is used to form a light emitting diode, the wavelength of the light emitted:

is in a range above 1.5 × 10−6 m

has nothing to do with the gap

is in a range centered on 1.5 × 10−6 m

is in a range below 1.5 × 10−6 m

is always 1.5 × 10−6 m

6 / 25

The magnetic quantum number m? is most closely associated with what property of an electron in an atom?

Radius of the orbit

Energy

Magnitude of the orbital angular momentum

z component of the spin angular momentum

z component of the orbital angular momentum

7 / 25

A certain material has a resistivity of 7.8 × 103 Ω · m at room temperature and it increases as the temperature is raised by 100◦ C. The material is most likely:

none of the above

an insulator

a metal

a heavily doped semiconductor

a pure semiconductor

8 / 25

In normal operation the current in a MOSFIT device is controlled by changing:

the number of donors and acceptors

the temperature

the density of electron states

the width of the depletion zone

the size of the sample

9 / 25

Application of a forward bias to a p-n junction:

increases the electric field in the depletion zone

narrows the depletion zone

decreases the number of donors on the n side

increases the potential difference across the depletion zone

increases the number of donors on the n side

10 / 25

An electron in a K shell of an atom has the principal quantum number:

n = 0

n = 2

n = ∞

n = 1

n = 3

11 / 25

“LED” stands for:

Luminescent Energy Developer

Light Energy Degrader

Less Energy Donated

Laser Energy Detonator

None of the above

12 / 25

A light emitting diode emits light when:

the junction gets hot

electrons are accelerated by the electric field in the depletion region

electrons collide with atoms

electrons from the conduction band recombine with holes from the valence band

electrons are excited from the valence to the conduction band

13 / 25

Which of the following is NOT true when a back bias is applied to a p-n junction?

The potential difference across the depletion zone increases

Electrons flow from the p to the n side

The electric field in the depletion zone increases

The depletion zone narrows

Holes flow from the p to the n side

14 / 25

The number of states in a shell with principal quantum number n = 3 is:

15 / 25

To observe the Zeeman effect one uses:

mutually perpendicular electric and magnetic fields

a strong uniform electric field

a strong non-uniform magnetic field

a strong uniform magnetic field

a strong uniform electric field

16 / 25

A given doped semiconductor can be identified as p or n type by:

measuring its magnetic susceptibility

measuring its heat capacity

measuring its coefficient of resistivity

performing a Hall effect experiment

measuring its electrical conductivity

17 / 25

Acceptor atoms introduced into a pure semiconductor at room temperature:

increase the number of electrons in the conduction band

increase the electrical resistivity

none of the above

increase the number of holes in the valence band

raise the Fermi level

18 / 25

A certain material has a resistivity of 7.8 × 103 Ω · m at room temperature and it decreases as the temperature is raised by 100◦ C. The material is most likely:

a metal

an insulator

a heavily doped semiconductor

none of the above

a pure semiconductor

19 / 25

For an unbiased p-n junction, the energy at the bottom of the conduction band on the n side is:

lower than the energy at the top of the valence band on the p side

the same as the energy at the bottom of the conduction band on the p side

lower than the energy at the top of the valence band on the n side

higher than the energy at the bottom of the conduction band on the p side

lower than the energy at the bottom of the conduction band on the p side

20 / 25

The quantum number ms is most closely associated with what property of the electron in an atom?

z component of the orbital angular momentum

Magnitude of the orbital angular momentum

Energy

z component of the spin angular momentum

21 / 25

Application of a forward bias to a p-n junction:

increases the diffusion current in the depletion zone

increases the drift current in the depletion zone

does not change the current anywhere

decreases the drift current on the n side outside the depletion zone

decreases the drift current on the p side outside the depletion zone

22 / 25

The Stern-Gerlach experiment makes use of:

a strong non-uniform magnetic field

a strong uniform electric field

strong perpendicular electric and magnetic fields

a strong uniform magnetic field

a strong non-uniform electric field

23 / 25

In an unbiased p-n junction:

the electric field vanishes everywhere

the electric potential vanishes everywhere

the drift current vanishes everywhere

the diffusion and drift currents cancel each other

24 / 25

A donor replacement atom in silicon might have ......................electrons in its outer shell:

25 / 25

The contact electric field in the depletion region of a p-n junction is produced by:

electrons in the conduction band alone

holes in the valence band alone

charged replacement atoms

an applied bias potential difference

electrons and holes together

Your score is

The average score is 0%

PPSC Lecturer of Physics Online Test 33 Past Papers

Related

Leave a Comment Cancel Reply

Related

Popular Posts

Leave a Comment Cancel Reply