PPSC Lecturer of Physics Online Test 33 Past Papers

Leave a Comment / By Hassan / October 17, 2020

Online Free Taleem is free online MCQ’s test related to Lecturer Physics. All the individuals who are going to appear in Lecturer Physics written test can attempt these tests in order to prepare for it in best possible way. Our tests of Lecturer of Physics include all the important questions and Past Paper of Lecturer Physics, that have extremely high amount of chances for been included in the actual exam which make our test undoubtedly the best source of preparation.

Note:-

There will be 25 multiple choice question in the test.
Answer of the questions will change randomly each time you start this test.
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Test Instructions:-
Test Name	Lecturer Physics
Subject	Physics Test 33
Test Type	MCQs
Total Questions	25
Total Time	20 Minutes
Total Marks	100

You have 20 minutes to pass to the quiz.

PPSC Lecturer of Physics Test 33

1 / 25

A donor replacement atom in silicon might have ......................electrons in its outer shell:

2 / 25

For an unbiased p-n junction, the energy at the bottom of the conduction band on the n side is:

lower than the energy at the top of the valence band on the n side

lower than the energy at the bottom of the conduction band on the p side

higher than the energy at the bottom of the conduction band on the p side

lower than the energy at the top of the valence band on the p side

the same as the energy at the bottom of the conduction band on the p side

3 / 25

Which of the following is NOT true when a back bias is applied to a p-n junction?

Holes flow from the p to the n side

The electric field in the depletion zone increases

The potential difference across the depletion zone increases

The depletion zone narrows

Electrons flow from the p to the n side

4 / 25

A given doped semiconductor can be identified as p or n type by:

measuring its magnetic susceptibility

measuring its heat capacity

measuring its electrical conductivity

performing a Hall effect experiment

measuring its coefficient of resistivity

5 / 25

The gap between the valence and conduction bands of a certain semiconductor is 0.85 eV. When this semiconductor is used to form a light emitting diode, the wavelength of the light emitted:

is in a range centered on 1.5 × 10−6 m

has nothing to do with the gap

is in a range above 1.5 × 10−6 m

is in a range below 1.5 × 10−6 m

is always 1.5 × 10−6 m

6 / 25

Application of a forward bias to a p-n junction:

decreases the drift current on the p side outside the depletion zone

decreases the drift current on the n side outside the depletion zone

increases the diffusion current in the depletion zone

increases the drift current in the depletion zone

does not change the current anywhere

7 / 25

Acceptor atoms introduced into a pure semiconductor at room temperature:

increase the number of electrons in the conduction band

none of the above

increase the electrical resistivity

increase the number of holes in the valence band

raise the Fermi level

8 / 25

“LED” stands for:

Luminescent Energy Developer

Light Energy Degrader

None of the above

Laser Energy Detonator

Less Energy Donated

9 / 25

To observe the Zeeman effect one uses:

mutually perpendicular electric and magnetic fields

a strong non-uniform magnetic field

a strong uniform electric field

a strong uniform magnetic field

a strong uniform electric field

10 / 25

In an unbiased p-n junction:

the drift current vanishes everywhere

the diffusion and drift currents cancel each other

the electric potential vanishes everywhere

the electric field vanishes everywhere

the drift current vanishes everywhere

11 / 25

The number of states in a shell with principal quantum number n = 3 is:

12 / 25

The Stern-Gerlach experiment makes use of:

a strong non-uniform electric field

a strong uniform magnetic field

strong perpendicular electric and magnetic fields

a strong non-uniform magnetic field

a strong uniform electric field

13 / 25

A certain material has a resistivity of 7.8 × 103 Ω · m at room temperature and it decreases as the temperature is raised by 100◦ C. The material is most likely:

a metal

a pure semiconductor

none of the above

a heavily doped semiconductor

an insulator

14 / 25

In normal operation the current in a MOSFIT device is controlled by changing:

the width of the depletion zone

the temperature

the number of donors and acceptors

the density of electron states

the size of the sample

15 / 25

The magnetic quantum number m? is most closely associated with what property of an electron in an atom?

Energy

Magnitude of the orbital angular momentum

z component of the spin angular momentum

Radius of the orbit

z component of the orbital angular momentum

16 / 25

A certain material has a resistivity of 7.8 × 103 Ω · m at room temperature and it increases as the temperature is raised by 100◦ C. The material is most likely:

a heavily doped semiconductor

a metal

none of the above

an insulator

a pure semiconductor

17 / 25

The quantum number ms is most closely associated with what property of the electron in an atom?

z component of the orbital angular momentum

z component of the spin angular momentum

Energy

Magnitude of the orbital angular momentum

18 / 25

Donor atoms introduced into a pure semiconductor at room temperature:

lower the Fermi level

increase the number of holes in the valence band

increase the electrical resistivity

none of the above

increase the number of electrons in the conduction band

19 / 25

The contact electric field in the depletion region of a p-n junction is produced by:

electrons in the conduction band alone

an applied bias potential difference

electrons and holes together

holes in the valence band alone

charged replacement atoms

20 / 25

When a forward bias is applied to a p-n junction the concentration of electrons on the p side:

decreases slightly

decreases dramatically

does not change

increases dramatically

increases slightly

21 / 25

An electron in a K shell of an atom has the principal quantum number:

n = 1

n = 2

n = ∞

n = 0

n = 3

22 / 25

Application of a forward bias to a p-n junction:

increases the potential difference across the depletion zone

increases the electric field in the depletion zone

narrows the depletion zone

increases the number of donors on the n side

decreases the number of donors on the n side

23 / 25

A certain material has a resistivity of 7.8×10−8 Ω ·m at room temperature and it increases as the temperature is raised by 100◦ C. The material is most likely:

a pure semiconductor

an insulator

none of the above

a heavily doped semiconductor

a metal

24 / 25

An acceptor replacement atom in silicon might have.................... electrons in its outer shell:

25 / 25

A light emitting diode emits light when:

electrons are accelerated by the electric field in the depletion region

electrons from the conduction band recombine with holes from the valence band

the junction gets hot

electrons collide with atoms

electrons are excited from the valence to the conduction band

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PPSC Lecturer of Physics Online Test 33 Past Papers

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